ЛИТЕРАТУРА •

1. Adashko J. G., Measuring Microwave Power witli tlie Hall Effect, Electron. Design, M, 196в, -, 118.

2. A ih a r 0 П i A., F r e i E. H., Horowitz Q., New Active Circuit Element Using the Magnetoresistive Effect, J. Appl. Phys. 26, 1955, 12, I4II.

3. A i g r a i n P., Sur un perfectionnement a la mesure des champs magnetiques par effet Hall. Ann. Radioelectr., 9, 1954, 35, 44.

4. A n t e 11 G. R., Chlorine and Iodine as Impurities in InAs and GaP. J. Appl. Phys., 31, .1960, 9, 1686.

5. Appel J., Die transversalen galvanomagnetischen Effekte in Halbleitern, Zeitschr. Naturf., 9a, 1954, 2, 167.

6. Arlt G., Halleffekt -Vierpole mil hohem Wirkungsgrad, So-lid-State Electronics, .1, 1960, 1, 75.

7. A s s m u s F., Boll R., Messungen an weichmagnetischen Werkstoffen mil dem Hallgenerator, ETZ-A, 77, 1956, 8, 234.

8. В a a d e r A., Siemens Halbleiter-Bauelemente, Siemens Zs., 34, 1960, 4, 255.

9. Bar abut es Т., Better Watt Transducer Design Uses Indium Arsenide Semiconductors, Materials in Design Engng, 51, 1960 5, 446.

10. Barlow H. E. M., An Amplifier Based on the Hall Effect. Nature, London, W5, 1955, 4466, 1004.

11. Barlow H. E. M., The Application of Hall Effect in a Semiconductor to the Measurement of Power in an Electromagnetic Field, Proc. lEE, 102 B, 1955, 3, 179, 199.

12. Barlow H. E. M., The Design of Semiconductors Wattmeters for Power Frequency and Audio - Frequency Applications, Proc. lEE, 102 B, 1955, 3, 186, 199.

13. В a r 1 0 w H. E. M., Hall Effect and its Counterpart, Radiation Pressure in Microwave Power Measurement, Proc. lEE 104 В 1957, 5, 35. .

14. В a r 1 0 w H. E. M„ The Hall Effect and its Applications to Microwave Power Measurement, Proc. IRE, 46, 1958, 7, 1411.

15. Barlow H. E. M., Power Measurement at 4 GHz by the Application of the Hall Effect in a Semiconductor, Proc. IEEE 406 B, 1959, 25, 27.

16. Barlow H. E. M., Microwave Hall Effects and the Accompanying IRotation of the Plane of Polarization, Proc. lEE, il08C 1961, 14, 349.

17. Barlow H. E. M., A Proposed New Method of Measuring Microwave Power and Impedance Using Hall Effect in a Semiconductor, Proc. lEE, 109B, 1962, 45, 286,

в этом списке литературы числа в конце каждой позиции означают последовательно; том, год издания, номер выпуска страницу (папп в ГЛ 31: том 9, 1954 г., № 35, стр. 44). j v i- . i . i

18. Barlow H. E. M., Microwave Power "Measurements, Trans. IRE, I-11, 1962, --, 257.

19. В a r 1 0 w H. E. M., High-Frequency Radiation Pressure and Hall Effect in a Semiconductors, Proc. lEE, 110, 1963, 1, 79.

20. Barlow H. E. M., Hall-Effect Reinforcement of High-Frequency Fields in Semiconductors and Some Applications, Proc. lEE, liM, 1964, 2,.231.

21. Barlow H. E. M., Beal J. C, An Experimental Impedance Relay Using the Hall Effect in a Semiconductor, Proc. lEE, 107A, 1960, Э1, 48.

22. В a r 1 0 w H. E. M„ В r 0 w n J., К r i s h n a K. V. G., A New Microwave Mixer, Nature, London, 181, 1958, 5 Apr., 1008.

23. Barlow H. E. M., Kataoka S., The Hall Effect and Its Application to Power Measurement at 10 GHz, Proc. lEE, 105B, 1958, 19, 53.

24. Barlow H. E. M., Krishna K. V. G., A Hall-Effect Microwave Mixer, Proc. lEE, 109B, 1962, 44, 131.

25. В a r 1 0 w H. E. M., Stephenson L. M„ The Hall Effect and Its Application to Power Measurement at Microwave Frequencies, Proc. lEE, 103B, 1956, 7, 110.

26. В a r n e у H. L., В u r n s F. P., Hall Effect Memory Device, Патент США, № 2964738, 13.,12.1960.

27. В a r t a G. Т., Hall Probes Improve Magnet Testing, Electronics, 35, 11962, 46, 66.

28. Bate G., T a у 1 о r К. N, R„ Production and Properties of Thin Layers of Indium Antimonide, J. Appl. Phys., Jl, 1960, 6, 991.

29. Bate R. Т., Beer A. C, Galvanomagnetic Effects in Semiconductors Containing Impurity Gradients, Proc. Int. Conf. Semicond. Phys., I960, -, 177.

30. Bate R. Т., Beer A. C, Influence of Conductivity Gradients on Galvanomagnetic Effects in Semiconductors, J. Appl. Phys., 32, 1961, 5, 800.

31. Bate A. Т., Bell J. C, Beer A. C, Influence of Mag-netoconductivity Discontinuities on Galvanomagnetic Effects in Indium Antimonide, J. Appl. Phys., 32, 1961, 5, 806.

32. B?k A„ Bernas S., Budziszewski M., Analizator sieci cieplnych, Instytut Elektrotechniki, Warszawa-Miedzylesie, 1964,

33. Bechtel R,, Grannemann W. W., Harper B. J., D. C. to A. C. Conversion Using Magnetoresistance, Solid-State Electronics, 7, 1964, 5, 357.

34. Beer A, C, Galvanomagnetic Effects in III -V Compound Semiconductors, J. Appl. Phys,, 32, 1961, 10 Suppl., 2107.

35. Beer A. C, Semiconducting Compounds -a Challenge in Applied and Basic Research, J. Electrochem, Soc, 405, 1958, 12, 743.

. 36. В e 11 u s E., Meranie priebehu koncentracie aktivnych primesi V difuznych vrstvach Ge a Si., Slabo-proudy Obzor, 25, 1964, 7, 394.

37. Besler R., A Technique of Soldering to thin Metal Films, Rev. Sci. Instr,, 25, 1954, 25, 180.

38. Bernstein L., Alloying to IH-V Compound Surfaces, J. Electrochem. Soc, HOO, 1962, 3, 270.

39. В i 11 i n g s A. R., Lloyd D. J., The Sources of Error in Hall-Effect Multipliers with Particular Reference to their Use as Modulators, Proc. lEE, I106B, 1960, Febr. Suppl., 706.

40. Billings A. R., Lloyd D. J., A Correlator Employing Hall Multipliers Applied to the Analysis of Controls, Proc. ШЕ, 107B, I960, 35, 435.

41. Black J., Ku S. M., Minden H. Т., Some Semiconducting Properties of HgTe, J. Electrochem. Soc, 105, 1958, 723.

42. Bonnet il leR., Principe et projets de realisation dun mo-teur induction monaphase a effet Hall., Bull. SFE, 3, 1962, 35, 573.

43. Bo n n e f i 1 I e R., Contribution a Ietude theorique et experi-mentale de Ieffet Hall on champ electrique tournant, (ROE 72, 1963, 9, 445.

44. Borkmann D., Der Halleffekt und seine Anwendung in der Technik, Radio u. Fernsehen, ilH, 1962, 22, Ш6.

45. В 0 r к m a n n D., Hochstrommessung mil Hallgeneratoren, Elektrie, 18, 1964, 2, 46.

46. В 0 11 e n b e г g H., Wirkleistungsmessung bei Hochfrequenz, ATM, -, 1963, 328, 105; V 3415-ч2.

47. Bowers R., В a u e r I e J. E., С о r n i s h A. J., InAsi-Px as a Thermoelectric Material, J. Appl. Phys., 30, 1959, 7, 1050.

48. В 5 r s с h 1 e i n H., Prazisionsmessung hoher QleichstrSme, Siemens Zs., 32, il958, 5, 323.

49. В r a d у L. J., M e I e h у В. A., Function Generators Using Hall Effect, Elec.tr. Mfg., -, 1960, 8 , 62.

50. В r a u n e r s r e u t h e r E., к u h r t F., Messumformer fur die elektronische Regelung des Effektivwertes einer Wechselspannung Re-gelungstechnik, 3, 1955, 4, 90.

51. Braunersreuther E., Kuhrt F., Lippmann H. J., Hall-konstante Elektronenbeweglichkeit von InSb, InAs und In(Aso,8Po,2) bei hohen Magnetfeldern, Zs. Naturforsch., 15a 1960 9, 795.

52. Br ecken ridge Q. R., Semiconducting Intermetallic Compounds, Phys. Rev., 90, 1953, 3, 488.

53. Breckenridge R. G., Blunt R. F., Hosier W. R., Frederikse H. P. R., В e с к e r J, H., О s h i n s к у W., Electrical and Optical Properties of Intermetalic Compound, I = InSb, Phys. Rev. 96, 1954, 3, 571.

54. Breitfeld H., Messung von magnetischen Luftspaltfeldern in elektrischen Maschinen mit Hallsonde und Koordinatenschreiber, ATM, -, 331, 173; V 8251-6.

55. В r 0 0 m R. F., R 0 s e - I n n e s A. C, A Pulse Method for Measurement of Hall Coefficient at Low Temperatures. Some Result-s on Indium Antimonide, Proc. Phys. Soc, 69 1956, part 12-В 449 1269. , , , H , ,

56. Brophy J. J., Rostoker N., Hall Effect Noise Phys. Rev., 100, 1955, 2, 754.

57. Broudy R. M., Galvanomagnetic Coefficients for Arbitrary Geometry, J. Appl. Phys., 29, 1958, 5, 853.

58. Brunner J., The Hall Effect in an Inhomogenous Magnetic Field, Solid-State Electronics, I, 1960, 172.

59. Brunner J., Ferrit-Hallgeneratoren und kleine Permanent-magnete als kontaktlose Geber fur die Steuerung Regelung von Be-wegungsvorgiingen, Siemens Zs., 36, 1962, 7, 521.

60. Bublilz G., Messung magnetischer Gleichfelder mit Wis-mutspiralen und Wismutplatten, ATM,-, 1938, Mai, T61; V 391-2.

61. Bud d H. F., Galvanomagnetic Phenomena in High Electric Fields, Phys. Rev., 131, 1963, 4, 1520.

62. В u I m a n W. E., Hall-Effect Generators, Electromechanical Design, 1959, March.

63. В u r с к h a r d t C. В., S t r u 11 M. J. O., Ober der Rauschen von stromlosen Widerstiinden und Hallelementen, Arch. Elektr. Obertr., 16, 1962, 12, 597.

64 Burckhardt C. В., Strult M. J. O., Sensitivity of a Magnetoresistance Wattmeter, Proc. IEEE, 51, ,1963, 2, 359.

65. Burckhardt C. В., Strut t M. J. O., Noise in Non-Reciprocal Two Parts Based on Hall-Effect, Trans. IEEE, ED-IH, 1964, 2, 47.

66. В u r с к h a r d t C. В., S t r u 11 M. J. O., W i 11 i s e n F. K-, Magnetoresistance of the Corbino Disk at Microwave Frequencies, Proc. IEEE, 52, 1964, 3, 277 a. Solid-State Electronics, 7, 1964, •5, 343.

67. Busch G., Jaggi R., В r a u n s с h w e i g P., Ballistische Methoden zur Messung des Hall-Effektes mit induzierten Stromen, Helv. Phys. Acta 26, 1953, 3/4, 392.

68. Busch G., Jaggi R., Kern R., Eigen-Halleffekt von InSb. Helv. Phys. Acta, 23, 1955, 452.

69. Busch G., Kern R., Die magnetischen Eigenschaften der Am-Bv Verbindungen, Helv. Phys. Acta, 3:2, 1959, 1, 24.

70 Busch G., Winkler V., Bestimmung der charakteris-tischen GrSssen eines Halbleiters, Ergebn. d. exakten Naturwissensch., 29, 1956, -, 145.

71. Bit trey J. W., Small Magnetic Field Mapping Probes of Thin Semiconducting Films, Rev. Sci. Instr., 80, 1959, 9, 815.

72. С a m r a s M., Some Experiments With Magnetic Playback Using Hall-Effect Sensitive Elements, Trans. IRE, AU-10, 1962, -, 84.

73. Carlson R. O., Electrical Properties of Mercury Telluride, Phys. Rev., Ill, 1958, 2. 476.

74. С a s i m i r H. B. G., On Onsagers Principle of Microscopic Reversibility Rev. Mod. Phys., 17, 1945, 343.

75. Cell n ski O., Rimawi I. H., Classification of Analog Multipliers Instr. Control Systems, 37, 1964, 6, 149.

76. Cervenak J. M a r с i n M., Naparowane Hallove sondy z antimonidu India, Slaboproudy Obzor, 24, 1963, 8, 439.

77. Cesnak L., Mefinski K., Pouzite Hallowych sond na vysetrenie magnetickeho pola vo vzduchovej medzere otacivych elektri-ckych strojov, Elektrotechn. Obzor, 48, 1959, 9, 485.

78. Champness C. H. J., The Transverse Magnetoresistance Effect in InSb, J. Electron. Contr., 4, 1958, -, 201.

79. Champness C. H. J., High Pulsed Field Magnetoresistance in Indium Antimonide and Indium Arsenide, Can. J. Phys., 41, 1963, 6, 890.

80. Chang K. K. N., Hughes R. D., High-Field Study of a Hall Effect Microwave Converter, J. .4ppl, Phys., 34, 1963, p. 4, 1, 777.

81. Chasm a r R. P., Cohen E., An Electrical Multiplier Utilizing the Hall-Effect in Indium Arsenide, Electronic Engng, 30, 1958. 11 661.

82. Chasm ar R. P., Cohen E., An Electrical Multiplier Utilizing the Hall-Effect in Indium Arsenide, M-V Gazette, -, 1959. 5, 140.

83. с h а s m а г R. P., С о h е п Е., Н о 1 m е s D. Р., The Design and Performance of a Hall-Effect Multiplier, Proc. lEE, 106 B, 1960, Suppl. 16, 702.

84. Chasm a r R. P., О p e n s h a w В., A Hall-Effect DC to AC Converter, Electronic Engng, 34, 1962, 417, 755.

85. С 1 a w s о n A. R., W i e d e r H. M., Bibliography on the Hall-Effect Theory and Applications, Solid-State Electronics, 7, 1964, 5, 387.

86. Cohen E., Some Measurement of Intermodulation and Harmonic Distortion in Hall-Effect Multipliers by Means of a Muirhead-Parametrada Wave Analyser, Technique, 14 1960, -, 19.

87. Cohen E., A Hall-Effect Multiplier for Use at Radio Frequencies, Electron. Engng, 32, 1960, 391, 558.

88. Cohen E., An Improved Radio Frequency Hall-Effect Modulator, Electronic Engng, 34, 1962, 411, 316.

89. С о 11 i n s J. :R., The Hall-Effect, Electronics World, 69, 1963, 4, 39.

90. Consigny E., Sondes a effect Hall. Collog. Intern, sur les dispositifs a semicond., 11, 1961, -, 570; Paris.

91. Con we 11 E., Properties of Silicon and Germanium I, Proc. IRE, 40, Ю52, 11, 1327.

92. С о n w e 11 E. M., Properties of Silicon and Germanium II, Proc. IRE, 46, 1958, -, 1281.

93. Coudres Des Th., Eine direkte Methode fur Wechselstrom-analyse, Verh. d. phys. Ges. Berlin, 17, 1898, -, 129.

94. С 0 u d r e s Des T h., Umwandlung von Weohselstrom in Gleichstrom mittels des Hallschen Phanomens, Phys. Zd., 2, 1904, 40, 586.

95. С r a i g P. H., The Hall-Effect in Vismuth with Low Magnetic Field, Phys. Rev., 27, 1926, -, 772.

96. С r a i g P. H., System and Apparatus Employing the «HaIl Effect», Патент США, № 1825855, 6.10.1931 и № 1822129, 8.9.1931.

97. Cyber nos, Deux applications de Ieffet Hall, Multiplicateurs de tension; circulateurs, Electronique Industr., 5, (1959, 26, 95.

98. С z i ch о n H., К о b e n d z a A., Zastosowanie warstw swiat-loczulych z polialkoholem winylowym do produkcji przyrzgdow pol-przewodnikiwyoh, Przeglgd Elektroniki, 3 1962, 12, 701.

99. Datta S. K., D a w A. N., The Hall Side Resistance of a Hajl Generator, Zs. Naturforsch, 19a, 1964, 3, 392.

100. D a uph i n e s Т., Moose r E., Apparatus for Measuring Resistivity and Hall Coefficient of Semiconductors, Rev. Sci. Instr., 26, 1955, 7, 660.

101. D a vi e s L. Hall Measurements, J.

102. D a vies L. licon, J. Sci. Instr., 35,

103. Delia Per netoresistance N-type

104. Denker S. cond. Prod., 4, 1963, 6,

105. Development ron., 7, I960, 5, 345.

106. De vin В Direct Current, 5, 1981

W., The Reduction of Misalignement Voltage in Sci. Instr., 35, 1958, 3, 111.

W.. Metallic Contacts to Germanium and Si-1958, 11, 423.

gola G. C, Sette D., Hall Ratio and Mag-Germanium, Phys. Rev., 104, 1956, 3, 598. P., Properties of Hall-Effect Multipliers, Semi-32.

in Hall Effect Multipliers, Brit. Comm. a. Elect-Some Practical Applications of the Hall Effect, 122.

107. Dicker son J. A., Field Mapper Uses Hall-Effect Device, Electr. Des. News, 7, 1962, 12, 88.

108. D i e b e 1 H., Selbstgleichende Kompensations-Messverfahren mit Heissleitern und Hallgeneratoren, Zs. Instrumentkunde, 7!l, 1963, 6, 164.

109. D о 1 s C. G., S к i f f E. W., W a t s 0 n P. G., Temperature-Regulated Vismuth Resistor for Magnetic Field Measurement, Rev. Sci. Instr., 29, 1958, 5, 349.

110. Donaldson G. W., The Application of Hall Effect to Control Synchros, Electronic Engng, 35, 1963, 423, 286.

111. Donoghul J. J., Fatherly W. P., A New Method for Precision Measurement of the Hall and Magnet-Resistive Coefficients, Rev. Sci. Instr., 22, 1951, 7, 513.

112. Drabble J. R., Wolfe P., Geometrical Effects in Transverse Magnetoresistance Measurements, J. Electron. Contr., 3, 1957, -, 259.

113. Dziuba Z., Giriat W., Otrzymywanie naparowanych hal-lotronow z HgSe, Przegl, Elektron., 2, 1961, 1, 74.

114. Dzung L. S., Magnetohydrodynamic Generator with Hall Effect at the Duct Ends, Brown Bov. Rev., 49, 1962, 6, 211.

115 Endsley D. L., G r a n n e m a n n W. W., Rosier L. L., Four-Terminal Analysis of the Hall Generator, Trans. IRE, ED-8, 1961, -, 220.

1116. En gel W., Anordnung zum Erzeugen von uber langs Zeit-raume hochstabilen Steuerstromen fur Hallmessonden, Патент ФРГ № 1120584, 19.7.1962

117. Engel W., Kuhrt F., L i p p m a n H. J., Ein neues Prin-zip zur kontaktlosen Signalgabe, ETZ-A, 81, 1960, 9 , 323.

118. Epstein M., Sachs M. M., G r e e n s t e i n L. J., Multiple Element Hall-Effect Sensor, Proc. IRE, 47, 1959, II, 2014.

119. Epstein M., Schulz R. В., Magnetic Field Pickup for low Frequency Radio-Interference Measuring Sets, Trans. IRE, ED-8, 1961, 1, 70.

120. Epstein M., Van Scoyoe I. N., GreensteinL. J., Magnetoresistive Magnetic Fields Sensor, Proc. Nat. Electron. Conf. Chicago, ,17, 1961, - 611.

421. IF a у L. E., A Hall Effects D. C. Resolver, Contr. Engng, 6, 1959, 12, 131.

122. IF a у L. E., The Hall Effect Application in Electrical Measurement, iSemicond. Prod., 3, 1960, 5, 39.

123. Finke H., Die elektrische Ausriistung grosser Aufzugan-lagen, Siemens Zs., 37, 1963, 2, 74.

124. Flanagan W. F., F 1 i n n P. A., A v e r b a с h B. L., Shorting and Field Corrections in Hall Measurements, Rev. Sci. Instr., 25 1954 6 593

I25.Folberth O. G., Mischkristallbildung bei Ain-By Ver-bindungen Zs. Naturforsch, 10a, 1955, 6, 502.

126. iFolberth O. G., Grimm R., Weiss H., Ober die elektrischen Eigensohaften von InAs-I, Zs. Naturforsch., 8a, 11953, 12, 826.

127. F 0 1 b e r t h O. G., M a d e 1 u n g O., Weiss H., Die elektrischen Eigenschaften von Indiumarsenid-II, Zs. Naturforsch., 9a, 1954, 11, 954.

128. Folberth O. G., Weiss H., Ober die elektrischen Eigen- schaften von InAs-III, Zs. Naturforsch., 11a, 1956, 6, 510.