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129. Fortini A., Le Bourgeois A., Mesure de la mobilite de Hall par la methode du disque Corbino, J. Phys. Radium-Phys. Appl., 23, 1962, 12 Supl,, 163A,

1.30. Frank H., Mefeni Hallovy pohydblivosti na celych krysta-lech, Ces. Cas. Fys., 9, 1959, 5, 499.

131. Frank v., On the Geometrical Arrangement in Hall Effect Measurement, Appl. Sci. Res., 3 B, 1953, -, 129.

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135. Frederikse H. P. R., H о s I e r W. R., Magnetoresistiye Effects in Indium Antimonide and Indium Arsenide, Solid State Phys. (Bruss), 2-pt 2, I960, -, 651.

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137. Qaizka R., Giriat W., Electrical Properties of the CdTe-HgTe System, Bull. Acad. Pol. Sci.-Ser. math, phys., 9, 1961, 4,281.

138. Qaiqzka R. R., Preparation, Doping and Electrical Properties of Cdo,iHgo,9Te, Acta Phys. Polon, 24, 1963, 6, 791.

139. Gaussmetre comparateur, Instrum. et Labs, -, I960, 14, 28. 140 G e b a 1 1 e T. H., H u 1 1 G. W., Seebeck Effect in Germanium,

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142. Germain C, Bibliographical Review of the Meihods of Measuring Magnetic Fields, Nncl. Instrum. Meth., 21, 1963, I, 17.

143. Gibbins W. G., Magnetoresistive Devices, Патент Англии № 879384, 11.10.1961.

144. Gibbons J. F. Hall Effect in High Electric Field, Proc. IRE, 47, 1959, 1, 102.

145. Giriat W., Zastosowanie materialow polprzewodnikowych 0 duzej ruchliwQSci nosnikow prdu, Postgpy Fizyki 10 1959, 2, 149.

146. Giriat W., Electrical Properties of Mercury Telluride, Brit. J. Appl. Phys., 15, 1964, 2, 151.

147. Giriat W., Rauluszkiewicz J., Otrzymywanie i wlas-nosci InSb, HgSe, HgTe, Przcglqd Eiektron., 1, 1960 2, 163.

148. Giriat W., Rauluszkiewicz J., Hallotrony. PWN. Warszawa, 1961.

149. G 1 i с к sm a n Using the Hall Effect,

150. G 1 i с к s m a n Electric Fields, Proc. IRE, 47, 1959, -,

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152 Gobrecht H., Electrical and ry Selenide (HgSe), J. Appl. Phys., 32,

M Semiconductor Frequency Multiplier Патент США № 3011069, 28.11.1961. M Steele M. C, Hall Effect in High I78I.

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154. iQo n d a P., Vyuzlte Hallovoho zjavu v polovodici к meranlu vykonu V elektromagnetickom poli, Elektrotechn. Obzor, 45, 1956, 12, 624.

155. Grabner L., Longitudinal Hall Effect, Phys. Rev., 117, 1960, 3, 689. -:

156. Green M., Electrode Geometries for which the Transverse Magneto - resistance is Equivalent to that of a Corbino Disc, Solid-State Electronics, 3, 1961, J14.

157. Green M., Corbino Disk Magnetoresistivity Measurements on InSb, J. Appl. Phys., 32, iioei, 7, 1236.

158. Green M., Corbino Disc, J. Appl. Phys., 32, 1961, 10, 2047.

159. Green M., Experimental Investigation of Electrode Geometries Having Transverse Magnetoresistance Equivalent to that of Corbino Disc. Solid-state Electronics, 6, 1963, 1, 63.

160. G r e i n e r R. A., Feedback Amplification Improves Hall-Effect Multipliers, Electronics, 34, 1961, 34, 52.

161. <Grobe E., Seller K., Stromrauschen in Silizium, Ann. d. Phys., Ill, 1963, 1, 75.

162. Grub bs W. J., Hall Effect Devices, BSTJ, 38, 1959, 3,

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163. Grubbs W. J., The Hall Effect CirculatorPasslve Transmission Device Proc. IRE, 47, 1959, 4, 528.

164. Grubbs W. J., A Undirectional Amplifier with Esaki Diodes, Trans. IRE, ED-8, 1961, -, 163.

165. G r u t z m a n n S., Hall-Effect Gyrators, Isolators and Circulator with High Efficiency, Proc IEEE, 51, 1963, 11, 1584.

166. Gut bier H., Bestimmung der Massenzahl in einem Mas-senspektrometer mit Hilfe eines Hallgenerators, Zs. Instrumentkunde, 71, 1963, 3, 74.

167. GO nther K. G., Aufdampfschichten aus halbleitenden III-V-Verbindungen, Zs. Naturforsch., 13a, 1958, -, 1081.

168. Gun the г К. G., F r e 11 e r H., Eigenschaften aufgedampf-ter InSb- und InAs-Schichten, Zs. Naturforsch., 16a, 1961, 3, 279.

169. G u n t h e r K- G., F r e 11 e r H., Neuartige Hallgeneratoren mit aufgedampfter Halbleiterschlcht, Siemens Zs., 36, 1962, 10, 728.

170. Hall E. H., On a New Action of the Magnet on Electric Currents, Philos. Magazine, 10, 1880, -, 225.

171. Hall E. H., On the New Action of Magnetism on a Permanent Electric Current, Philos. Magazine, 10, 1880, 63, 301.

172. «Halltron» and Meter Relay Indicate and Control Power, Eleotr. Design News, 6, 1961, 2, 32.

173. H a m a t a V., Hallov generator a iego pouziti, Elektrotech. Obzor, 46, 1957, 8, 405.

174. H amble ton S. E., Gartner W. W., Microwave Hall Effect in Germanium and Silicon at 20 kMc, Phys. Cham. Solids 8, 1959, -, 329.

175. Hansen A., Hall Effect Telemetering Transmitter Патент США № 2536805, 2.1.1951.

176. Hansen A., Hall Effect Regulator and Balancing System, Патент США № 2551265, 1.5.1951.

177. Н a г a с S., Measuring Function Accuracy of Hall-Effect Generators, Electro-Technol., 68, 1961, 9, 134.

21-1401



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178. Harac S., Tischler O., Hall Effect Generators for So-lid-State Synchros and Resolvers, Electrotechnical Design, - 1961, 1, 14.

179. Harding J. W., The Change of Resistance of a Semiconductor in a Magnetic Field, Proc. Roy. Soc, 140A, 1933, -, 205.

180. Harman T. C, Goering H. L., Beer A. C, Electrical Properties of n-type InAs, Phys. Rev., 104, 1956, 6, 1562.

181. Harman T. C, L о g a n M. J., Goering H. L , Preparation and Electrical Properties of HgTe, J. Phys. Chem. Solids, 7, 1958, -,228.

182. H a r t e 1 W., Anwendung der Hallgeneratoren, Siemens Zs., - 28, 1954, 8, 376.

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1184. H a r t e 1 W., Proprietes et Bull. AIM, 74, 1901, 1, 11.

185. Hanlein W., Gunther schaften von Mehrkomponentenschichten durch Vakuumbedampfung, Advances in Vacuum Sci. and Technol., vol. 11, 1960, Pergamon Press.

186. Hausler H., Magnetischer Zielspeicher mit statischer Ab-fragung durch Hall Qeneratoren zur kontaktlosen Steuerung des Fer-tigungsflusses, Siemens Zs., 35, 1961, 1, 45.

187. Hausler J., Der Widerstand und das Feld eines rech-teckigen Hall--Platchens, Zs. Naturforsch., 17a, 1%2 6 506.

188. Henisch H. K., Hall Effect Amplifier, Патент США № 2877309, 10.3.1959.

189. Henkel R., Three New Devices Readied from Thin Film Hall Effect R and D, Electron, News 7, 307, 48.

1190. H e n n i g G. R., Applying the Hall Effect to Practical Magnet Testing, Electrical Mfg., 59, 1958, -, 132.

191. Herkart P. G., Kurshan J., Theoretical Resistivity and Hall Coefficient of Impure Germanium Near Room Temperature RCA Rev., 14, 1953, 3, 427.

192. Hiebsch W., . Zafizeni pro elektricke kompensatory, me-fici mustky a regulatory vyuzijici Hallova effektu, Патент ЧССР № 92559 il 5.11.1959.

193. H ieronymus H., Weiss H., Die galvanomagnetische Eigenschaften voil InSb, Solid-State Electronics, 5, 1962, 71.

194. Hieronymus H., Weiss H., Ober die Messung kleins-ter magnetischer Felder mit Hallgeneratorn, Siemens Zs., 31, 1957, 8, 404.

195. Hilbinger A. R., New Uses for Hall-Effect Modulators, Electronics, 37, 1964, 3, 30.

196. Hilbinger A. R., Scanga Develop Practical Hall Effect Devices 5, 88.

197. H i 1 s u m C, Multiplication by Semiconductors Electronics Engng, 30, 1958, 369, 664.

198. H il s u m C, Galvanomagnetic Effects and Their Application, Brit. J. of Appl. Phys., 12, 1961, 3, 85.

199. H i 1 s u m C, R 0 s e -1 n n e s A. C, A New Method of Measuring Susceptibility, Nature, London, 182, 1958, 4642, 1082.

200. Hilsum C, Rose-Innes A. C, Semiconducting III-V Compounds, Pergamon Press, 1961, Oxford.

W. A., Barrack C. H., Electron. Inds., 20, 1961,

201. H1 asn ik I., Polak M., Teplotna zavislost Hallovych generatorov a jej kompenzacia, Elektrotechnicky Casopis, Bratislava, 15, 1964, 6, 345.

202. Hollitscher H., Magnetic Flux Pattern Instrumentation Using Hall Probes, Power Appar. System. 1960, 51, 915.

203. Hopkinson J., Note on Mr. E. H. Halls Experiments on the «АсИоп of Magnetism on a Permanent Electric Current*, Phil. Magazine, 10, 1880, -, 430.

204. Hood R. Т., Measuring Current in High-Energy Arc Jets. Instrum. a. Control Systems, 37, 1964, 1, 99.

205 Hosek J., Vesely L., Vitek J., Zafizeni к mereni elektrickeho proudu. Патент ЧССР № 92340, 15.10.1959.

206. Hrostowski H. J., Мог in F. J., Geballe T. H., Weathly G. M., Hall Effect and Conductivity in InSb, Phys. Rev., 100, 1955, 6, 1672.

207. Hsu F. S. L., К u n z 1 e r J. E., Magnetoresistance Probe for Measuring Magnetic Field Intensity in a Small Space, Rev. Sci. Instr., 34, 1963, 3, 297.

208 Hubbard C. H., Losasso L. A., Rousso E., Microwave Isolator Combines Hall Effect and Tunnel Diodes, Electronics, 34, 1961, 24, 56.

209. H u 1 m e K. P., M u 11 i n J. В., Indium Antimonide-a Review ol its Preparation, Properties and Devices Applications, Solid-State Electron., 5, 1962, - 211.

210 H u n t e r L. P., Graphical Representation of the Semiconductor Hall Effect. Phys. Rev., 94, 1954, 5, 1157.

211. I gnatowicz S., Elektrody do hallotronow naparowywa-nych z HgTe, Przeglad Elektroniki, 5, 11964, 4, 171

212. I gnatowicz S., Ко bus A., Wlasnosci cienkich warstw naparowywanych z HgTe, Komunikat na Sympozjum Przyrzdow Polprzewodnikowych-Jablonna, 1964, IX.

213. I s e n b e r g I., R u s s e 1 B. R., G r e e n e R. F., Improved Method, for Measuring HalL Coefficients, Rev. Sci. Instr., 19, 1948,

214. J a g g i R., Probenform und Anordnung der Potentialsonden bei Hali-effektsmessungen ohne und mit ausseren Magnetfeldern, Helv. Phys. Acta, 29, 1956, 3, 201.

215 Jan J. P., Galvanomagnetic and Thermomagnetic Effects in Metals, Solid State Physics, 5, 1957, -, 3.

216. Janicki Т., Kobus A. (dane nieopublikowane).

217. Иоффе A., Физика полупроводников, Изд-во АН СССР, 1957.

218. Johnson Н. Н., Migdley D., The Corbino Disk and its Selfmagnetic Field, Proc lEE, 109 B, 1962, 45, 283.

219. Johnson J., Hall Effect Applied to Nondestructive Testing, Electro-Technical, 71, 1963, 6, 12.

220. Jo us sell n J., Magnetometre a effet Hall, Atomprax, 8, 1962, 4, 140.

221. Jurgen R. K., Hall Effect Devices, Electronics, 32, 1959, 3 63

222 Just i E., Thuy H. J., Galvanomagnetische Niederfrequ-enz-Verstarker, Zs. Naturforsch., 9a, 1954, 2, 183.

223. К a 1 e r H., Mehrbereich Flussdichtenmesser mit Hallsonde, Elektrie, H©, 1962, 10, 331.



224. Kalic D., Uredaj za merienje uczestanosti sa riezonantnim kolom i cholowim elemientom, Zbornik radowa Inst. «Nikola Tesla», Belgrad, I960, 3, 15.

225. Kannelakos D. P., S chuck R. P., T о d d A. C, Hall Effect Wattmeters, IRE Trans. Audio, 9, 1961, 1, 5.

226. К a t a 0 к a S., Magnetoresistance Multiplier with Higher Gain, Proc. IRE, 50, iI962, 2, 216.

227. К a t a 0 к a S., Sensitivity of a Magnetoresistance Wattmeter, Proc. IRE, 50, 1962, 8, 1849.

228. К a t a 0 к a S., Magnetoresistance Microwave Wattmeter, Proc. IEEE, 51, 1963, 2, 380.

229. Kataoka S., Correction to Function Generator lorY=Ax + + Bx + Cx+D Employing the Galvanomagnetic Effects in Semiconductors, Proc. IRE, 51, 1963, 3, 869.

230. Kataoka S., Y a m a d a H., Function Generator to Y=Ax + + Bx + Cx+D Employing the Galvanomagnetic Effects in Semiconductors, Proc. IRE, 50, 1962, 12, 2522.

231. Keister G. L., A Compact Multiplier Puts the Hall Effect to Work, ControlEngng, -, 1955, 11, 94.

232. Kemp В., Hall-Effect Insturmentation, Indianopolis USA, 1962, H. W. Sams and Co.

233. Kettel, Schneider, Analog Multiplier and Divider, IRE Trans., EC-10, 1961, Sept., 269.

234. Kleinman D. A., Schawlow A. L, Corbino Disk., J, Appl. Phys., 31, I960, 12, 2176.

235. Kobus A., Projektowanie i wlasciwosci hallotronow germanowych, Przegld Elektroniki, 1, I960, 4, 414.

236. Kobus A., Hallotron germanowy, Archiwum Elektrotechniki, 9, 1960, 4, 720.

237. Kobus A., Elektryczne wlasnosci hallotronow CHI i СНЗ, РАК. 6, 1960, 11, 446.

238. Kobus A., On Secondary Asymetry in Germanium Hall Generators, Bull. Acad. Pol. Sci., Ser. techn., 9, 1961, 2, 201.

239. Kobus A., Asymetria wtorna w hallotronach germanowych, Przeglad Elektroniki, 3, 1962, 7, 375.

240. Kobus A., Gaussotron z antymonku indowego, Przeglad Elektroniki, 3, 1962, 4, 183.

241. Kobus A., Wplyw asymetrii wtornej na charakterystyki hallotronu, РАК, 9, 1963, 2, 61.

242. Kobus A., Podstawy projektowania hallotronow towaniu).

243. Kobus A. (dane nieopublikowane),

244. Kobus A., Tepelne vlastnosti Hallovych generatorov Elek-trotechniky Cas, Bratislava, 14, 1963, 5, 251.

245. Kobus A., Miniaturowy hallotron germanowy CH4, Przeglad Elektroniki, 5, 1964, 3, 111.

246. Kobus A., On Secondary Asymetry in Germanium Hall Generators II, Analysis of Component Voltages, Bull. Acad. Pol. Sci., Ser. techn., 12, 1964 , 6 , 31.

247. Kobus A., Temperaturowe wlasnosci hallotronowe, Archiwum Elektrotechniki, 43, 1964, 2, 290.

248. Kobus A., Asymetria wtorna w hallotronach geгmanowycl, Archiwum Elektrotechniki, 13, 1964, 3.

(w przygo-

249. Kobus A., I g n a t 0 w i с z S., Naparowywane hallotrony z tellurku rt§ciowego HNI3 i HNI4, Przeglad Elektroniki, 5, 1964, 12. 632.

250. Kobus A., I g n a t 0 w i с z S., Projektowanie hallotronow naparowywanych z HgTe (w przygotowaniu).

251. Kobus A., Izoiator z antymonku indowego, Komunikat na Sympozjum Przyrzgdow Polprzewodnikowych, Jablonna, 1964, IX.

252. Kobus A., Hallotron germanowy о zmniejszonej asymetrii wtornej (w przygotowaniu).

253. Koch L., Lambert G., Leffet Hall dans les semicon-ducteurs et ses possibilites dapplication, LOnde Electrique, 39, 1959, .382, 32.

254. К о e h I e r H., К о s t у s h у n В., К u T. C, A Note on Hall Probe Resolution, I. B. M. J. Res. Dev., 5, 1961, 326.

255. К oh out F., Der Hallgenerator und seine technische An-wendimg, Interne Technische Mitteilungen aus der RFZ, 6 1962, 12, 1.

256. Koike R., Barlow H. E. M., Microwave Measurements on the Magnetoresistance Effect Semiconductors, Proc. lEE, 109 B, 1962, 44, 137.

257. Kooi C. F., Weaver J. L., Nonlinear Hall-Effect Ternary Logic Element, Solid State Electronics, 7, 1964, 5, 311.

258. Koppe H., Bryan J. M., On the Theory of the Hall Effect, Can. J. Phys., 29, 1951, 4, 274.

259. Kostyshyn В., Roshon D., Magnetic Field Probe of High Sensitivity and Resolution, Proc IRE, 47, 1959, 3, 451.

260. Kovath G., Me serve W. E., The Hall-Effect Analog Multiplier, Trans. IRE, EC-10, I96I, 9, 512.

261. Koller W., Untersuchungen der Mikrostruktur von Magnetfeldern in elektrischen Mashcinen mit Hallsonde und Flussmesser, ATM, 1961, 305, 131; V 8251-5.

262. Kroemer H., On the Theory of Hall-Effect Isolators for Tunnel Diode Amplifiers, Solid-State Electroncs, 7, 1964, 5, 291.

263. Kruszewski Z., Zagadnienia pomiaru przestrzennego wek-lora indukcji magnetycznej, Przeglgd Elektroniki, 3, 1962, 5, 267.

264. Kruszewski Z, Tecnnologia Jjontaktow w hallotronach, Przeglad Elektroniki, 3, 1962. 9, 519.

265. Kubatova J., Princip a pouziti Hallovych generatoru, Elektrofechnik, 12, 1957, I, 7.

266. Kubrycht J., Prime mefeni intensity magnetickeho pole pomoci Hallova jevu, Elektrotechn. Obz., 45, 1956, 11, 566.

267. Kuhn L., Pouziti Hallovych generatoru v konstrukci vyva-zovacich stroju, Elektrotechn. Cas., 14, 1963, 5, 271.

268. Kuhrt F., Eigenschaften von Hallgeneratoren, Siemens Zs., i!8, 1954, 8, 370.

269. Kuhrt F., Broad-Area Resistance Body for Hall Generators, Патент США № 2825858, 16,8.1955.

270. Kuhrt F., Eigenschaften und Anwendungen der Hallgeneratoren, VDE-Fachberichte, 19, 1956, 1.

271. Kuhrt F., Der Hallgenerator als Leistungsverstarker und Schwingungserzeuger, ETZ-A78, 1957, 10, 342.

272. Kuhrt F., Hall Generators of Increased Sensitivity, Патент США №2814015, 19.11.1957.

273. Kuhrt F., Hall Voltage Device for Translating Electric Magnitudes, Патент СЩА № 2862189, 25.11.1958.



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